sg6100/sg6511 sg6101/sg6510 description the sg6100/sg6511 and sg6101/sg6510 diode arrays are monolithic, high breakdown, fast switching speed diode arrays. the sg6100/sg6511 is configured with 7 straight through diodes, while the sg6101/sg6510 has 8 straight through diodes. these two diode array configurations allow the designer maximum flexibility for circuit design and board layout. since each diode within the array has individual anode and cathode connections the device may be used in a variety of applications. also, due to the array's monolithic construction the diode electrical parameters are very closely matched. both devices are available in ceramic dip and flatpack and can be processed to linfinity's s level, jantxv, jantx, or jan equivalent flows. diode array circuits features 75v minimum breakdown voltage 100ma current capability per diode switching speeds less than 5ns low leakage current < 25na high reliability features mil-s-19500/474 qpl - 1n6100 - 1n6101 - 1n6510 - 1n6511 equivalent jans, jantxv, jantx, jan screening available circuit diagrams 7 - straight through diodes sg6100/sg6511 8 - straight through diodes sg6101/sg6510 6/91 rev 1.1 2/94 l in f in ity microelectronics inc. copyright ? 1994 11861 western avenue garden grove, ca 92841 1 (714) 898-8121 fax: (714) 893-2570
diode array series 6/91 rev 1.1 2/94 l in f in ity microelectronics inc. copyright ? 1994 11861 western avenue garden grove, ca 92841 2 (714) 898-8121 fax: (714) 893-2570 absolute maximum ratings (note 1 & 2) breakdown voltage (v br ) .................................................... output current (i o ), t c = 25c continuous ................................................................. 75v 300ma operating junction temperature hermetic (j, f packages) ............................................ storage temperature range ............................ lead temperature (soldering, 10 seconds) .................. 150 c -65 c to 200 c 300 c note 1. exceeding these ratings could cause damage to the device. note 2. applicable for each diode. thermal data j package (14 & 16 pin): thermal resistance- junction to case , q jc .................. 30c/w thermal resistance- junction to ambient , q ja .............. 80c/w f package (14 pin): thermal resistance- junction to case , q jc .................. 80c/w thermal resistance- junction to ambient , q ja ........... 140c/w f package (16 pin): thermal resistance- junction to case , q jc .................. 70c/w thermal resistance- junction to ambient , q ja ........... 115c/w note a. junction temperature calculation: t j = t a + (p d x q ja ). note b. the above numbers for q jc are maximums for the limiting thermal resistance of the package in a standard mount- ing configuration. the q ja numbers are meant to be guidelines for the thermal performance of the device/pc- board system. all of the above assume no ambient airflow. operating ambient temperature range sg6100 .......................................................... -55 c to 150 c sg6101 .......................................................... -55 c to 150 c note 3. range over which the device is functional. recommended operating conditions (note 3) electrical characteristics (unless otherwise specified, these specifications apply for the operating ambient temperature of t a = 25 c for each diode. low duty cycle pulse testing techniques are used which maintains junction and case temperatures equal to the ambient temperature.) 1.0 1.0 25 100 50 4 15 5 min. typ. max. v v v na na m a pf ns ns i r = 5 m a, duty cycle < 20% duty cycle 2%, 300 s pulse i f = 100ma i f = 10ma, t a = -55c v r = 20v v r = 40v v r = 40v, t a = 150c v r = 0v, f = 1mhz, pin-to-pin i f = 500ma, t r 15ns, v fr = 1.8v, r s = 50 w i f = i r = 200ma, i rr = 20ma, r l = 100 w breakdown voltage (v br ) forward voltage (v f ) reverse current (i r ) capacitance (c) (note 4) forward recovery time (t fr ) (note 4) reverse recovery time (t rr ) (note 4) 75 test conditions units parameter note 4. the parameters, although guaranteed, are not 100% tested in production. sg6511 .......................................................... -55 c to 150 c sg6510 .......................................................... -55 c to 150 c sg6100/sg6511 sg6010/sg6510
diode array series 6/91 rev 1.1 2/94 l in f in ity microelectronics inc. copyright ? 1994 11861 western avenue garden grove, ca 92841 3 (714) 898-8121 fax: (714) 893-2570 connection diagrams & ordering information (continued) ambient temperature range part no. package connection diagram 14-pin ceramic dip j - package sg6511j -55 c to 150 c (1n6511) sg6101j -55 c to 150 c (1n6101) 16-pin ceramic dip j - package sg6100f -55 c to 150 c (1n6100) 14-pin ceramic flatpack f - package 14 13 12 10 11 9 8 6 7 5 4 3 2 1 1 2 3 4 5 6 7 14 9 10 13 12 11 8 15 16 16-pin ceramic flatpack f - package sg6510f -55 c to 150 c (1n6510) 1 2 3 7 6 5 4 9 10 8 11 12 13 14 16 15 14 9 10 11 12 13 1 2 8 7 6 5 4 3 note 1. consult factory for other packages available. 2. all packages are viewed from the top. 3. consult factory for jan, jantx, jantxv product availability.
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